SI7942DP-T1-E3 VISHAY/SILICONIX PowerPAK SO-8 MOS Drive

SI7942DP-T1-E3
  • SI7942DP-T1-E3

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  • Part Number
  • SI7942DP-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • IC Chips
  • Package
  • PowerPAK SO-8
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The SI7942DP-T1-E3 from VISHAY/SILICONIX manufacturer is a IC Chips with MOSFET 100V N-CH. The SI7942DP-T1-E3 is Mosfet Array 2 N-Channel (Dual) 100V 3.8A 1.4W Surface Mount PowerPAK? SO-8 Dual Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R MOSFET 100V N-CH. More details for SI7942DP-T1-E3 can be seen below.

Details

Mosfet Array 2 N-Channel (Dual) 100V 3.8A 1.4W Surface Mount PowerPAK? SO-8 Dual
Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R
MOSFET 100V N-CH
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI7942DP-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
SI7942DP-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
100 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
15 ns
Typical Turn Off Delay Time
35 ns
Transistor Type
2 N-Channel
Transistor Polarity
N-Channel
Tradename
TrenchFET/PowerPAK
Technology
Si
Supplier Device Package
PowerPAKR SO-8 Dual
Series
TrenchFETR
Rise Time
15 ns
Rds On Max Id Vgs
49 mOhm @ 5.9A, 10V
Rds On Drain Source Resistance
49 mOhms
Power Max
1.4W
Pd Power Dissipation
1.4 W
Part Aliases
SI7942DP-T1
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR SO-8 Dual
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
-
Id Continuous Drain Current
3.8 A
Gate Charge Qg Vgs
24nC @ 10V
Forward Transconductance Min
14 S
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Fall Time
20 ns
Drain to Source Voltage Vdss
100V
Current Continuous Drain Id 25°C
3.8A
Configuration
Dual
Channel Mode
Enhancement

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