SI4559ADY-T1-E3 VISHAY/SILICONIX SO-8 MOS Drive

SI4559ADY-T1-E3
  • SI4559ADY-T1-E3

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  • Part Number
  • SI4559ADY-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Arrays
  • Package
  • SO-8
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The SI4559ADY-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET N-AND P-CH 60V(D-S). The SI4559ADY-T1-E3 is Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SO Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R MOSFET N-AND P-CH 60V(D-S). More details for SI4559ADY-T1-E3 can be seen below.

Details

Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SO
Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R
MOSFET N-AND P-CH 60V(D-S)
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4559ADY-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 02 - May 07 (Choose Expedited Shipping)
EDA / CAD Models
SI4559ADY-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
15 ns 30 ns
Typical Turn Off Delay Time
20 ns 40 ns
Transistor Type
1 N-Channel 1 P-Channel
Transistor Polarity
N-Channel P-Channel
Technology
Si
Supplier Device Package
8-SO
Series
TrenchFETR
Rise Time
65 ns 70 ns
Rds On Max Id Vgs
58 mOhm @ 4.3A, 10V
Rds On Drain Source Resistance
46 mOhms 100 mOhms
Power Max
3.1W, 3.4W
Pd Power Dissipation
2 W
Part Aliases
SI4559ADY-E3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
665pF @ 15V
Id Continuous Drain Current
4.3 A
Gate Charge Qg Vgs
20nC @ 10V
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Fall Time
10 ns 30 ns
Drain to Source Voltage Vdss
60V
Current Continuous Drain Id 25°C
5.3A, 3.9A
Configuration
1 N-Channel 1 P-Channel
Channel Mode
Enhancement

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