The SI2333DS-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.1A; On-Resistance, Rds(on):0.032ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:Yes,MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V.
The SI2333DS-T1-E3 is P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V. More details for SI2333DS-T1-E3 can be seen below.
Details
P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V
- Categories
- Transistors
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V1070-SI2333DS-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 17 - May 22 (Choose Expedited Shipping)
- EDA / CAD Models
- SI2333DS-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1V @ 250μA
- Vgs Gate Source Voltage
- 8 V
- Vds Drain Source Breakdown Voltage
- - 12 V
- Unit Weight
- 0.050717 oz
- Typical Turn On Delay Time
- 25 ns
- Typical Turn Off Delay Time
- 72 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- SOT-23-3 (TO-236)
- Series
- TrenchFETR
- Rise Time
- 45 ns
- Rds On Max Id Vgs
- 32 mOhm @ 5.3A, 4.5V
- Rds On Drain Source Resistance
- 32 mOhms
- Power Max
- 750mW
- Pd Power Dissipation
- 750 mW
- Part Aliases
- SI2333DS-T1
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 1100pF @ 6V
- Id Continuous Drain Current
- 4.1 A
- Gate Charge Qg Vgs
- 18nC @ 4.5V
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 45 ns
- Drain to Source Voltage Vdss
- 12V
- Current Continuous Drain Id 25°C
- 4.1A (Ta)
- Configuration
- Single
- Channel Mode
- Enhancement
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A: Yes, Our product technical engineer will help you with the SI2333DS-T1-E3 pinout information, application notes, replacement,
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
