The SI3590DV-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.5A; On-Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V,MOSFET N&P-CH 30V (D-S).
The SI3590DV-T1-E3 is Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP MOSFET N&P-CH 30V (D-S). More details for SI3590DV-T1-E3 can be seen below.
Details
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
MOSFET N&P-CH 30V (D-S)
- Categories
- MOS Drive
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V7583-SI3590DV-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- SI3590DV-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1.5V @ 250μA
- Vgs Gate Source Voltage
- 12 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Unit Weight
- 0.000705 oz
- Typical Turn On Delay Time
- 5 ns
- Typical Turn Off Delay Time
- 13 ns 20 ns
- Transistor Type
- 1 N-Channel 1 P-Channel
- Transistor Polarity
- N-Channel P-Channel
- Technology
- Si
- Supplier Device Package
- 6-TSOP
- Series
- TrenchFETR
- Rise Time
- 12 ns 15 ns
- Rds On Max Id Vgs
- 77 mOhm @ 3A, 4.5V
- Rds On Drain Source Resistance
- 77 mOhms 170 mOhms
- Power Max
- 830mW
- Pd Power Dissipation
- 830 mW
- Part Aliases
- SI3590DV-T1
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- -
- Id Continuous Drain Current
- 2.5 A
- Gate Charge Qg Vgs
- 4.5nC @ 4.5V
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Fall Time
- 12 ns 15 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 2.5A, 1.7A
- Configuration
- 1 N-Channel 1 P-Channel
- Channel Mode
- Enhancement
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-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
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- Q: SI3590DV-T1-E3 Warranty?
- A: We Provide 90 days warranty for our product.
- Q: SI3590DV-T1-E3 Technical Support?
-
A: Yes, Our product technical engineer will help you with the SI3590DV-T1-E3 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
