SI4459ADY-T1-GE3 VISHAY/SILICONIX SOIC-8 MOS Drive

SI4459ADY-T1-GE3
  • SI4459ADY-T1-GE3

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  • Part Number
  • SI4459ADY-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • SOIC-8
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The SI4459ADY-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET 30V 29A 7.8W 5.0mohm @ 10V. The SI4459ADY-T1-GE3 is P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R MOSFET 30V 29A 7.8W 5.0mohm @ 10V. More details for SI4459ADY-T1-GE3 can be seen below.

Details

P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
MOSFET 30V 29A 7.8W 5.0mohm @ 10V
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4459ADY-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
SI4459ADY-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.5V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 30 V
Unit Weight
0.006596 oz
Typical Turn On Delay Time
16 ns
Typical Turn Off Delay Time
80 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
8-SO
Series
TrenchFETR
Rise Time
16 ns
Rds On Max Id Vgs
5 mOhm @ 15A, 10V
Rds On Drain Source Resistance
5 mOhms
Qg Gate Charge
61 nC
Power Max
7.8W
Pd Power Dissipation
7.8 W
Part Aliases
SI4459ADY-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
6000pF @ 15V
Id Continuous Drain Current
19.7 A
Gate Charge Qg Vgs
195nC @ 10V
Forward Transconductance Min
24 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
20 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
29A (Tc)
Configuration
Single
Channel Mode
Enhancement

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