The SI3585DV-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:19A; On-Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:20V,MOSFET 20V 2.4/1.8A.
The SI3585DV-T1-E3 is Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP Trans MOSFET N/P-CH 20V 2A 6-Pin TSOP T/R. More details for SI3585DV-T1-E3 can be seen below.
Details
Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Trans MOSFET N/P-CH 20V 2A 6-Pin TSOP T/R
- Categories
- MOS Drive
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V7583-SI3585DV-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- SI3585DV-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 600mV @ 250μA (Min)
- Supplier Device Package
- 6-TSOP
- Series
- TrenchFETR
- Rds On Max Id Vgs
- 125 mOhm @ 2.4A, 4.5V
- Power Max
- 830mW
- Packaging
- Digi-ReelR
- Package Case
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Input Capacitance Ciss Vds
- -
- Gate Charge Qg Vgs
- 3.2nC @ 4.5V
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage Vdss
- 20V
- Current Continuous Drain Id 25°C
- 2A, 1.5A
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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