The SI3552DV-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:30V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RoHS Compliant: Yes,MOSFET 30V 2.5/1.8A.
The SI3552DV-T1-E3 is Mosfet Array N and P-Channel 30V 1.15W Surface Mount 6-TSOP Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET 30V 2.5/1.8A. More details for SI3552DV-T1-E3 can be seen below.
Details
Mosfet Array N and P-Channel 30V 1.15W Surface Mount 6-TSOP
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
MOSFET 30V 2.5/1.8A
- Categories
- MOS Drive
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V7583-SI3552DV-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 08 - May 13 (Choose Expedited Shipping)
- EDA / CAD Models
- SI3552DV-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1V @ 250μA (Min)
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Unit Weight
- 0.000705 oz
- Typical Turn On Delay Time
- 7 ns 8 ns
- Typical Turn Off Delay Time
- 13 ns 12 ns
- Transistor Type
- 1 N-Channel 1 P-Channel
- Transistor Polarity
- N-Channel P-Channel
- Tradename
- TrenchFET
- Technology
- Si
- Supplier Device Package
- 6-TSOP
- Series
- TrenchFETR
- Rise Time
- 9 ns 12 ns
- Rds On Max Id Vgs
- 105 mOhm @ 2.5A, 10V
- Rds On Drain Source Resistance
- 105 mOhms 175 mOhms
- Power Max
- 1.15W
- Pd Power Dissipation
- 1.15 W
- Part Aliases
- SI3552DV-E3
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- -
- Id Continuous Drain Current
- 2.5 A
- Gate Charge Qg Vgs
- 3.2nC @ 5V
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Fall Time
- 5 ns 7 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- -
- Configuration
- 1 N-Channel 1 P-Channel
- Channel Mode
- Enhancement
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- Q: SI3552DV-T1-E3 Warranty?
- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the SI3552DV-T1-E3 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
