SI4850EY-T1-E3 VISHAY/SILICONIX SO-8 MOS Drive

SI4850EY-T1-E3
  • SI4850EY-T1-E3

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  • Part Number
  • SI4850EY-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • SO-8
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The SI4850EY-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with N-Channel Reduced Qg, Fast Switching MOSFET,MOSFET 60 Volt 8.5 Amp 3.3W. The SI4850EY-T1-E3 is N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R MOSFET 60 Volt 8.5 Amp 3.3W. More details for SI4850EY-T1-E3 can be seen below.

Details

N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
MOSFET 60 Volt 8.5 Amp 3.3W
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4850EY-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
SI4850EY-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
10 ns
Typical Turn Off Delay Time
25 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
TrenchFET
Technology
Si
Rise Time
10 ns
Rds On Drain Source Resistance
22 mOhms
Pd Power Dissipation
1.7 W
Part Aliases
SI4850EY-E3
Packaging
Reel
Package Case
SO-8
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
6 A
Fall Time
10 ns
Configuration
Single
Channel Mode
Enhancement

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