SI4463BDY-T1-E3 VISHAY/SILICONIX SOIC-8 MOS Drive

SI4463BDY-T1-E3
  • SI4463BDY-T1-E3

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  • Part Number
  • SI4463BDY-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • SOIC-8
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The SI4463BDY-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET 20V 13.7A 0.011Ohm. The SI4463BDY-T1-E3 is P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R MOSFET 20V 13.7A 0.011Ohm. More details for SI4463BDY-T1-E3 can be seen below.

Details

P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
MOSFET 20V 13.7A 0.011Ohm
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4463BDY-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
SI4463BDY-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
12 V
Vds Drain Source Breakdown Voltage
- 20 V
Unit Weight
0.006596 oz
Typical Turn On Delay Time
35 ns
Typical Turn Off Delay Time
115 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Rise Time
60 ns
Rds On Drain Source Resistance
11 mOhms
Pd Power Dissipation
1.5 W
Part Aliases
SI4463BDY-E3
Packaging
Reel
Package Case
SOIC-Narrow-8
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
9.8 A
Fall Time
60 ns
Configuration
Single
Channel Mode
Enhancement

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