The SIR424DP-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with Trans MOSFET N-CH 20V 23.4A .
The SIR424DP-T1-GE3 is N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK? SO-8 Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R MOSFET 20V 5.5mohm @ 10V. More details for SIR424DP-T1-GE3 can be seen below.
Details
N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK? SO-8
Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R
MOSFET 20V 5.5mohm @ 10V
- Categories
- Transistors
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V1070-SIR424DP-T1-GE3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 05 - May 10 (Choose Expedited Shipping)
- EDA / CAD Models
- SIR424DP-T1-GE3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.5V @ 250μA
- Vgs th Gate Source Threshold Voltage
- 2.5 V
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 20 V
- Unit Weight
- 0.017870 oz
- Typical Turn On Delay Time
- 18 ns
- Typical Turn Off Delay Time
- 23 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- PowerPAKR SO-8
- Series
- TrenchFETR
- Rise Time
- 12 ns
- Rds On Max Id Vgs
- 5.5 mOhm @ 20A, 10V
- Rds On Drain Source Resistance
- 4.6 mOhms
- Qg Gate Charge
- 22 nC
- Power Max
- 41.7W
- Pd Power Dissipation
- 4.8 W
- Part Aliases
- SIR424DP-GE3
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- PowerPAKR SO-8
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 1250pF @ 10V
- Id Continuous Drain Current
- 30 A
- Gate Charge Qg Vgs
- 35nC @ 10V
- Forward Transconductance Min
- 80 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 10 ns
- Drain to Source Voltage Vdss
- 20V
- Current Continuous Drain Id 25°C
- 30A (Tc)
- Configuration
- Single Quad Drain Triple Source
- Channel Mode
- Enhancement
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-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
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- Q: SIR424DP-T1-GE3 Warranty?
- A: We Provide 90 days warranty for our product.
- Q: SIR424DP-T1-GE3 Technical Support?
-
A: Yes, Our product technical engineer will help you with the SIR424DP-T1-GE3 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
