SI4532ADY-T1-E3 VISHAY/SILICONIX SOIC-8 MOS Drive

SI4532ADY-T1-E3
  • SI4532ADY-T1-E3

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  • Part Number
  • SI4532ADY-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Arrays
  • Package
  • SOIC-8
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The SI4532ADY-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET 30V 4.9/3.9A 2W. The SI4532ADY-T1-E3 is Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1.2W Surface Mount 8-SO Trans MOSFET N/P-CH 30V 3.7A/3A 8-Pin SOIC N T/R MOSFET 30V 4.9/3.9A 2W. More details for SI4532ADY-T1-E3 can be seen below.

Details

Mosfet Array N and P-Channel 30V 3.7A, 3A 1.13W, 1.2W Surface Mount 8-SO
Trans MOSFET N/P-CH 30V 3.7A/3A 8-Pin SOIC N T/R
MOSFET 30V 4.9/3.9A 2W
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4532ADY-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 15 - May 20 (Choose Expedited Shipping)
EDA / CAD Models
SI4532ADY-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 250μA (Min)
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
30 V
Unit Weight
0.006596 oz
Typical Turn On Delay Time
12 ns 8 ns
Typical Turn Off Delay Time
23 ns 21 ns
Transistor Type
1 N-Channel 1 P-Channel
Transistor Polarity
N-Channel P-Channel
Tradename
TrenchFET
Technology
Si
Supplier Device Package
8-SO
Series
TrenchFETR
Rise Time
10 ns 9 ns
Rds On Max Id Vgs
53 mOhm @ 4.9A, 10V
Rds On Drain Source Resistance
44 mOhms 62 mOhms
Power Max
1.13W, 1.2W
Pd Power Dissipation
2 W
Part Aliases
SI4532ADY-E3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
-
Id Continuous Drain Current
4.9 A
Gate Charge Qg Vgs
16nC @ 10V
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Fall Time
8 ns 10 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
3.7A, 3A
Configuration
N-Channel P-Channel
Channel Mode
Enhancement

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