The SI1902DL-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:0.66A; On-Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-SC-70; Leaded Process Compatible:Yes,MOSFET 20V 0.70A.
The SI1902DL-T1-E3 is Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6 (SOT-363) Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R MOSFET 20V 0.70A. More details for SI1902DL-T1-E3 can be seen below.
Details
Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6 (SOT-363)
Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R
MOSFET 20V 0.70A
- Categories
- Transistors
- Manufacturer
- VISHAY/SILICONIX
- Veswin Part Number
- V1070-SI1902DL-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 18 - May 23 (Choose Expedited Shipping)
- EDA / CAD Models
- SI1902DL-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1.5V @ 250μA
- Vgs Gate Source Voltage
- 12 V
- Vds Drain Source Breakdown Voltage
- 20 V
- Unit Weight
- 0.000265 oz
- Typical Turn On Delay Time
- 10 ns
- Typical Turn Off Delay Time
- 10 ns
- Transistor Type
- 2 N-Channel
- Transistor Polarity
- N-Channel
- Tradename
- TrenchFET
- Technology
- Si
- Supplier Device Package
- SC-70-6 (SOT-363)
- Series
- TrenchFETR
- Rise Time
- 16 ns
- Rds On Max Id Vgs
- 385 mOhm @ 660mA, 4.5V
- Rds On Drain Source Resistance
- 385 mOhms
- Power Max
- 270mW
- Pd Power Dissipation
- 270 mW
- Part Aliases
- SI1902DL-E3
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- -
- Id Continuous Drain Current
- 700 mA
- Gate Charge Qg Vgs
- 1.2nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Fall Time
- 16 ns
- Drain to Source Voltage Vdss
- 20V
- Current Continuous Drain Id 25°C
- 660mA
- Configuration
- Dual
- Channel Mode
- Enhancement
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
