SI1563EDH-T1-E3 VISHAY/SILICONIX SOT-363-6 Transistors

SI1563EDH-T1-E3
  • SI1563EDH-T1-E3

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  • Part Number
  • SI1563EDH-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • IC Chips
  • Package
  • SOT-363-6
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The SI1563EDH-T1-E3 from VISHAY/SILICONIX manufacturer is a IC Chips with MOSFET 20V 1.28/1.0. The SI1563EDH-T1-E3 is Mosfet Array N and P-Channel 20V 1.13A, 880mA 570mW Surface Mount SC-70-6 (SOT-363) Trans MOSFET N/P-CH 20V 1.13A/0.88A 6-Pin SC-70 T/R. More details for SI1563EDH-T1-E3 can be seen below.

Details

Mosfet Array N and P-Channel 20V 1.13A, 880mA 570mW Surface Mount SC-70-6 (SOT-363)
Trans MOSFET N/P-CH 20V 1.13A/0.88A 6-Pin SC-70 T/R
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI1563EDH-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 22 - May 27 (Choose Expedited Shipping)
EDA / CAD Models
SI1563EDH-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 100μA
Supplier Device Package
SC-70-6 (SOT-363)
Series
TrenchFETR
Rds On Max Id Vgs
280 mOhm @ 1.13A, 4.5V
Power Max
570mW
Packaging
Digi-ReelR
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
-
Gate Charge Qg Vgs
1nC @ 4.5V
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
1.13A, 880mA

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