The SUD23N06-31L-E3 from VISHAY manufacturer is a FETs - Single with MOSFET, N REEL 2K; Transistor type:MOSFET; Current, Id cont:23A; Resistance, Rds on:0.031R; Case style:D-PAK (TO-252); Case style, alternate:D-PAK; Current, Idm pulse:50A; Marking, SMD:SUD23N06-31L; Power dissipation:100W; Power, RoHS Compliant: Yes,MOSFET 60V 23A 100W.
The SUD23N06-31L-E3 is N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak) Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK MOSFET 60V 23A 100W. More details for SUD23N06-31L-E3 can be seen below.
Details
N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak)
Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK
MOSFET 60V 23A 100W
- Categories
- Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V1070-SUD23N06-31L-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- SUD23N06-31L-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 3V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 60 V
- Unit Weight
- 0.050717 oz
- Typical Turn On Delay Time
- 8 ns
- Typical Turn Off Delay Time
- 30 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Tradename
- TrenchFET
- Technology
- Si
- Supplier Device Package
- TO-252, (D-Pak)
- Series
- TrenchFETR
- Rise Time
- 15 ns
- Rds On Max Id Vgs
- 31 mOhm @ 15A, 10V
- Rds On Drain Source Resistance
- 31 mOhms
- Power Max
- 100W
- Pd Power Dissipation
- 5.7 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Input Capacitance Ciss Vds
- 670pF @ 25V
- Id Continuous Drain Current
- 9.1 A
- Gate Charge Qg Vgs
- 17nC @ 10V
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 25 ns
- Drain to Source Voltage Vdss
- 60V
- Current Continuous Drain Id 25°C
- -
- Configuration
- Single
- Channel Mode
- Enhancement
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