The SI2312BDS-T1-GE3 from VISHAY manufacturer is a FETs - Single with N CHANNEL MOSFET, 20V, 5A, Transistor Polarity:N Channel, Continuous Drain Current Id:3.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:850mV. The SI2312BDS-T1-GE3 is N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V. More details for SI2312BDS-T1-GE3 can be seen below.
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