SI4914BDY-T1-E3 VISHAY SOIC-8 MOS Field Effect Transistors

VISHAY
  • SI4914BDY-T1-E3

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  • Part Number
  • SI4914BDY-T1-E3
  • Product Categories
  • MOS Field Effect Transistors
  • Package
  • SOIC-8
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The SI4914BDY-T1-E3 from VISHAY manufacturer is a MOS Field Effect Transistors with MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3. The SI4914BDY-T1-E3 is Mosfet Array 2 N-Channel (Half Bridge) 30V 8.4A, 8A 2.7W, 3.1W Surface Mount 8-SO Trans MOSFET N-CH 30V 6.7A/7.4A 8-Pin SOIC N T/R MOSFET 30V 8.4/8.0A 2.1/3.1. More details for SI4914BDY-T1-E3 can be seen below.

Details

Mosfet Array 2 N-Channel (Half Bridge) 30V 8.4A, 8A 2.7W, 3.1W Surface Mount 8-SO
Trans MOSFET N-CH 30V 6.7A/7.4A 8-Pin SOIC N T/R
MOSFET 30V 8.4/8.0A 2.1/3.1
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-SI4914BDY-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
SI4914BDY-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.7V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
30 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
9 ns 10 ns
Typical Turn Off Delay Time
16 ns
Transistor Type
2 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
8-SO
Series
LITTLE FOOTR
Rise Time
10 ns 9 ns
Rds On Max Id Vgs
21 mOhm @ 8A, 10V
Rds On Drain Source Resistance
23 mOhms
Power Max
2.7W, 3.1W
Pd Power Dissipation
1.7 W 2 W
Part Aliases
SI4914BDY-E3
Packaging
Tape & Reel (TR)
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
-
Id Continuous Drain Current
6.7 A
Gate Charge Qg Vgs
10.5nC @ 4.5V
FET Type
2 N-Channel (Half Bridge)
FET Feature
Standard
Fall Time
10 ns 9 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
8.4A, 8A
Configuration
Dual with Schottky Diode
Channel Mode
Enhancement

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  • Q: SI4914BDY-T1-E3 Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SI4914BDY-T1-E3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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