MJD44H11T4G TAIWAN TO-252-3 Triodes

MJD44H11T4G
  • MJD44H11T4G

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  • Part Number
  • MJD44H11T4G
  • Product Categories
  • Transistors (BJT) - Single
  • Package
  • TO-252-3
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The MJD44H11T4G from TAIWAN manufacturer is a Transistors (BJT) - Single with SILICON POWER TRANSISTORS,Bipolar Transistors 8A 80V 20W NPN. The MJD44H11T4G is Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Surface Mount DPAK-3 Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R Bipolar Transistors - BJT 8A 80V 20W NPN. More details for MJD44H11T4G can be seen below.

Details

Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Surface Mount DPAK-3
Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R
Bipolar Transistors - BJT 8A 80V 20W NPN
Categories
Triodes
Manufacturer
TAIWAN
Veswin Part Number
V107113-MJD44H11T4G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
MJD44H11T4G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
80V
Vce Saturation Max Ib Ic
1V @ 400mA, 8A
Transistor Type
NPN
Transistor Polarity
NPN
Supplier Device Package
DPAK-3
Series
MJD44H11
Power Max
1.75W
Pd Power Dissipation
20 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum DC Collector Current
8 A
Gain Bandwidth Product fT
85 MHz
Frequency Transition
85MHz
Emitter Base Voltage VEBO
5 V
DC Current Gain hFE Min Ic Vce
40 @ 4A, 1V
DC Collector Base Gain hfe Min
60
Current Collector Ic Max
8A
Current Collector Cutoff Max
1μA
Continuous Collector Current
8 A
Configuration
Single
Collector Emitter Voltage VCEO Max
80 V
Collector Emitter Saturation Voltage
1 V
Collector Base Voltage VCBO
5 V

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