IRLML6401TRPBF TAIWAN SOT-23 MOS Field Effect Transistors

IRLML6401TRPBF
  • IRLML6401TRPBF

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  • Part Number
  • IRLML6401TRPBF
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23
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The IRLML6401TRPBF from TAIWAN manufacturer is a FETs - Single with -12V Single P-Channel HEXFET Power MOSFET; Similar to IRLML6401. The IRLML6401TRPBF is P-Channel 12V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3?/SOT-23 Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl. More details for IRLML6401TRPBF can be seen below.

Details

P-Channel 12V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3?/SOT-23
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Categories
MOS Field Effect Transistors
Manufacturer
TAIWAN
Veswin Part Number
V107110-IRLML6401TRPBF-TAIWAN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRLML6401TRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
950mV @ 250μA
Vgs Gate Source Voltage
8 V
Vds Drain Source Breakdown Voltage
- 12 V
Unit Weight
0.050717 oz
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
Micro3?/SOT-23
Series
HEXFETR
Rds On Max Id Vgs
50 mOhm @ 4.3A, 4.5V
Rds On Drain Source Resistance
50 mOhms
Qg Gate Charge
10 nC
Power Max
1.3W
Pd Power Dissipation
1.3 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
830pF @ 10V
Id Continuous Drain Current
- 4.3 A
Gate Charge Qg Vgs
15nC @ 5V
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate, 1.8V Drive
Drain to Source Voltage Vdss
12V
Current Continuous Drain Id 25°C
4.3A (Ta)

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