The IXFN180N20 from IXYS manufacturer is a Module with N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage of 200V, resistance 10mΩ HiPerFET N-channel enhancement mode power MOSFET) ,MOSFET 200V 180A. The IXFN180N20 is N-Channel 200V 180A (Tc) 700W (Tc) Chassis Mount SOT-227B Trans MOSFET N-CH Si 200V 180A 4-Pin SOT-227B . More details for IXFN180N20 can be seen below.
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