The IXFA4N100Q from IXYS manufacturer is a FETs - Single with N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage 1000V, resistance 3.0Ω N-channel enhancement mode HiPerFET power MOSFET) ,MOSFET 4 Amps 1000V 2.8 Rds. The IXFA4N100Q is Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK MOSFET 4 Amps 1000V 2.8 Rds. More details for IXFA4N100Q can be seen below.
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