IRLR3636TRPBF IR TO-252-2 MOS Field Effect Transistors

IR
  • IRLR3636TRPBF

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  • Part Number
  • IRLR3636TRPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRLR3636TRPBF from IR manufacturer is a FETs - Single with MOSFET N-CH 60V 50A. The IRLR3636TRPBF is N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC. More details for IRLR3636TRPBF can be seen below.

Details

N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRLR3636TRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
IRLR3636TRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.5V @ 100μA
Vgs th Gate Source Threshold Voltage
2.5 V
Vgs Gate Source Voltage
16 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
45 ns
Typical Turn Off Delay Time
43 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
D-Pak
Series
HEXFETR
Rise Time
216 ns
Rds On Max Id Vgs
6.8 mOhm @ 50A, 10V
Rds On Drain Source Resistance
6.8 mOhms
Qg Gate Charge
33 nC
Power Max
143W
Pd Power Dissipation
143 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 175°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Input Capacitance Ciss Vds
3779pF @ 50V
Id Continuous Drain Current
99 A
Gate Charge Qg Vgs
49nC @ 4.5V
Forward Transconductance Min
31 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Fall Time
69 ns
Drain to Source Voltage Vdss
60V
Current Continuous Drain Id 25°C
50A (Tc)
Configuration
Single
Channel Mode
Enhancement

IR Inventory

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  • A: We Provide 90 days warranty for our product.
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