IRLR3410TRPBF IR TO-252-2 MOS Field Effect Transistors

IR

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  • Part Number
  • IRLR3410TRPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRLR3410TRPBF from IR manufacturer is a FETs - Single with 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3410TR with Lead Free Packaging on Tape and Reel. The IRLR3410TRPBF is N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC. More details for IRLR3410TRPBF can be seen below.

Details

N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R
MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRLR3410TRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 03 - Apr 08 (Choose Expedited Shipping)
EDA / CAD Models
IRLR3410TRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2V @ 250μA
Vgs Gate Source Voltage
16 V
Vds Drain Source Breakdown Voltage
100 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
7.2 ns
Typical Turn Off Delay Time
30 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
D-Pak
Series
HEXFETR
Rise Time
53 ns
Rds On Max Id Vgs
105 mOhm @ 10A, 10V
Rds On Drain Source Resistance
155 mOhms
Qg Gate Charge
22.7 nC
Power Max
79W
Pd Power Dissipation
52 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 175°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Input Capacitance Ciss Vds
800pF @ 25V
Id Continuous Drain Current
15 A
Gate Charge Qg Vgs
34nC @ 5V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Fall Time
26 ns
Drain to Source Voltage Vdss
100V
Current Continuous Drain Id 25°C
17A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the IRLR3410TRPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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