The IRFR5505TRPBF from TAIWAN manufacturer is a FETs - Single with -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR5505TR with Lead Free Packaging on Tape and Reel.
The IRFR5505TRPBF is P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC. More details for IRFR5505TRPBF can be seen below.
Details
P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak
Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R
MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC
- Categories
- MOS Field Effect Transistors
- Manufacturer
- TAIWAN
- Veswin Part Number
- V107110-IRFR5505TRPBF-TAIWAN
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- IRFR5505TRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 250μA
- Vgs th Gate Source Threshold Voltage
- - 4 V
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 55 V
- Unit Weight
- 0.139332 oz
- Typical Turn On Delay Time
- 12 ns
- Typical Turn Off Delay Time
- 20 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- D-Pak
- Series
- HEXFETR
- Rise Time
- 28 ns
- Rds On Max Id Vgs
- 110 mOhm @ 9.6A, 10V
- Rds On Drain Source Resistance
- 110 mOhms
- Qg Gate Charge
- 32 nC
- Power Max
- 57W
- Pd Power Dissipation
- 57 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 650pF @ 25V
- Id Continuous Drain Current
- - 18 A
- Gate Charge Qg Vgs
- 32nC @ 10V
- Forward Transconductance Min
- 4.2 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 16 ns
- Drain to Source Voltage Vdss
- 55V
- Current Continuous Drain Id 25°C
- 18A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components,
which may include IRFR5505TRPBF, on hand to ship same day or short lead-time. Veswin Company is a full service IRFR5505TRPBF supplier and distributor for IRFR5505TRPBF.
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- A: Please click on the "Add to Cart" Button and then proceed to checkout.
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- A: We accept T/T(Bank wire), Paypal, Credit card Payment through PayPal.
- Q: How Long Can I Get The IRFR5505TRPBF?
-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
Please choose your preferred shipping method when checking out on our website.
- Q: IRFR5505TRPBF Warranty?
- A: We Provide 90 days warranty for our product.
- Q: IRFR5505TRPBF Technical Support?
-
A: Yes, Our product technical engineer will help you with the IRFR5505TRPBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
