The IRL3705NPBF from INFINEON manufacturer is a FETs - Single with 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRL3705N with lead free packaging.
The IRL3705NPBF is N-Channel 55V 89A (Tc) 170W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB. More details for IRL3705NPBF can be seen below.
Details
N-Channel 55V 89A (Tc) 170W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 55V 89A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Infineon Technologies AG
- Veswin Part Number
- V107110-IRL3705NPBF-Infineon
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- IRL3705NPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 16 V
- Vds Drain Source Breakdown Voltage
- 55 V
- Unit Weight
- 0.211644 oz
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Rds On Drain Source Resistance
- 10 mOhms
- Qg Gate Charge
- 65.3 nC
- Pd Power Dissipation
- 130 W
- Packaging
- Tube
- Package Case
- TO-220-3
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Id Continuous Drain Current
- 77 A
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