IRF1010EPBF INFINEON TO-220AB MOS Field Effect Transistors

INFINEON
  • IRF1010EPBF

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  • Part Number
  • IRF1010EPBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRF1010EPBF from INFINEON manufacturer is a FETs - Single with HEXFET Power MOSFET (iii). The IRF1010EPBF is N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-220AB Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 60V 81A 12mOhm 86.6nC. More details for IRF1010EPBF can be seen below.

Details

N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 60V 81A 12mOhm 86.6nC
Categories
MOS Field Effect Transistors
Manufacturer
Infineon Technologies AG
Veswin Part Number
V107110-IRF1010EPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 01 - May 06 (Choose Expedited Shipping)
EDA / CAD Models
IRF1010EPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.211644 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rds On Drain Source Resistance
12 mOhms
Qg Gate Charge
86.6 nC
Pd Power Dissipation
170 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Id Continuous Drain Current
81 A

INFINEON Inventory

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INFINEON Original Stock

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  • Q: IRF1010EPBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRF1010EPBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRF1010EPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

INFINEON Obsolete Part

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