IRFR3410PBF INFINEON TO-252-2 MOS Field Effect Transistors

INFINEON
  • IRFR3410PBF

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  • Part Number
  • IRFR3410PBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRFR3410PBF from INFINEON manufacturer is a FETs - Single with HEXFET Power MOSFET. The IRFR3410PBF is Trans MOSFET N-CH 100V 31A 3-Pin(2+Tab) DPAK Tube MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC. More details for IRFR3410PBF can be seen below.

Details

Trans MOSFET N-CH 100V 31A 3-Pin(2+Tab) DPAK Tube
MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC
Categories
MOS Field Effect Transistors
Manufacturer
Infineon Technologies AG
Veswin Part Number
V107110-IRFR3410PBF-Infineon
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
IRFR3410PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
4 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
100 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
12 ns
Typical Turn Off Delay Time
40 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
27 ns
Rds On Drain Source Resistance
39 mOhms
Qg Gate Charge
37 nC
Pd Power Dissipation
110 W
Packaging
Tube
Package Case
TO-252-3
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
31 A
Forward Transconductance Min
33 S
Fall Time
13 ns
Configuration
Single
Channel Mode
Enhancement

INFINEON Inventory

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  • Q: IRFR3410PBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRFR3410PBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRFR3410PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

INFINEON Obsolete Part

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