IRFR13N20DTRPBF INFINEON TO-252-2 MOS Field Effect Transistors

INFINEON
  • IRFR13N20DTRPBF

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  • Part Number
  • IRFR13N20DTRPBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRFR13N20DTRPBF from INFINEON manufacturer is a FETs - Single with N-channel 200V 13A. The IRFR13N20DTRPBF is N-Channel 200V 13A (Tc) 110W (Tc) Surface Mount D-Pak Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK T/R MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC. More details for IRFR13N20DTRPBF can be seen below.

Details

N-Channel 200V 13A (Tc) 110W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK T/R
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC
Categories
MOS Field Effect Transistors
Manufacturer
Infineon Technologies AG
Veswin Part Number
V107110-IRFR13N20DTRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
IRFR13N20DTRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
30 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
11 ns
Typical Turn Off Delay Time
17 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
27 ns
Rds On Drain Source Resistance
235 mOhms
Qg Gate Charge
25 nC
Pd Power Dissipation
110 W
Packaging
Reel
Package Case
TO-252-3
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
14 A
Fall Time
10 ns
Configuration
Single
Channel Mode
Enhancement

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  • Q: IRFR13N20DTRPBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRFR13N20DTRPBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRFR13N20DTRPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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