IRFD9110PBF VISHAY DIP-4 MOS Field Effect Transistors

VISHAY
  • IRFD9110PBF

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  • Part Number
  • IRFD9110PBF
  • Product Categories
  • FETs - Single
  • Package
  • DIP-4
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The IRFD9110PBF from VISHAY manufacturer is a FETs - Single with HEXFET POWER MOSFET VDSS = -100V , RDSon = 1.2ヘ , ID = -0.70A. The IRFD9110PBF is P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP MOSFET P-Chan 100V 0.7 Amp. More details for IRFD9110PBF can be seen below.

Details

P-Channel 100V 700mA (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP
MOSFET P-Chan 100V 0.7 Amp
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-IRFD9110PBF-VISHAY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
IRFD9110PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 100 V
Typical Turn On Delay Time
10 ns
Typical Turn Off Delay Time
15 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Rise Time
27 ns
Rds On Drain Source Resistance
1.2 Ohms
Pd Power Dissipation
1.3 W
Packaging
Tube
Package Case
HVMDIP-4
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
700 mA
Fall Time
27 ns
Configuration
Single Dual Drain
Channel Mode
Enhancement

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  • Q: IRFD9110PBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRFD9110PBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRFD9110PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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