IRF630NPBF VISHAY TO-220AB MOS Field Effect Transistors

VISHAY

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  • Part Number
  • IRF630NPBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRF630NPBF from VISHAY manufacturer is a FETs - Single with HEXFET Power MOSFET. The IRF630NPBF is N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC. More details for IRF630NPBF can be seen below.

Details

N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-IRF630NPBF-VISHAY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
IRF630NPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
7.9 ns
Typical Turn Off Delay Time
27 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
14 ns
Rds On Drain Source Resistance
300 mOhms
Qg Gate Charge
23.3 nC
Pd Power Dissipation
82 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
9.3 A
Forward Transconductance Min
4.9 S
Fall Time
15 ns
Configuration
Single
Channel Mode
Enhancement

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  • Q: IRF630NPBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRF630NPBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRF630NPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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