The IRF840PBF from VISHAY manufacturer is a FETs - Single with N CHANNEL MOSFET, 500V, 8A, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:500V, On Resistance Rds(on):850mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Product Range:-.
The IRF840PBF is N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB MOSFET N-Chan 500V 8.0 Amp. More details for IRF840PBF can be seen below.
Details
N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB
MOSFET N-Chan 500V 8.0 Amp
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V107110-IRF840PBF-
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Apr 25 - Apr 30 (Choose Expedited Shipping)
- EDA / CAD Models
- IRF840PBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 500 V
- Unit Weight
- 0.211644 oz
- Typical Turn On Delay Time
- 14 ns
- Typical Turn Off Delay Time
- 49 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- TO-220AB
- Rise Time
- 23 ns
- Rds On Max Id Vgs
- 850 mOhm @ 4.8A, 10V
- Rds On Drain Source Resistance
- 850 mOhms
- Qg Gate Charge
- 63 nC
- Power Max
- 125W
- Pd Power Dissipation
- 125 W
- Part Aliases
- SIHF830-E3
- Packaging
- Tube
- Package Case
- TO-220-3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 1300pF @ 25V
- Id Continuous Drain Current
- 8 A
- Gate Charge Qg Vgs
- 63nC @ 10V
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 20 ns
- Drain to Source Voltage Vdss
- 500V
- Current Continuous Drain Id 25°C
- 8A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
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- Q: IRF840PBF Warranty?
- A: We Provide 90 days warranty for our product.
- Q: IRF840PBF Technical Support?
-
A: Yes, Our product technical engineer will help you with the IRF840PBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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