IRF840PBF VISHAY TO-220AB MOS Field Effect Transistors

VISHAY
  • IRF840PBF

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  • Part Number
  • IRF840PBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRF840PBF from VISHAY manufacturer is a FETs - Single with N CHANNEL MOSFET, 500V, 8A, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:500V, On Resistance Rds(on):850mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Product Range:-. The IRF840PBF is N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB MOSFET N-Chan 500V 8.0 Amp. More details for IRF840PBF can be seen below.

Details

N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB
MOSFET N-Chan 500V 8.0 Amp
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-IRF840PBF-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 25 - Apr 30 (Choose Expedited Shipping)
EDA / CAD Models
IRF840PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
500 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
14 ns
Typical Turn Off Delay Time
49 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
TO-220AB
Rise Time
23 ns
Rds On Max Id Vgs
850 mOhm @ 4.8A, 10V
Rds On Drain Source Resistance
850 mOhms
Qg Gate Charge
63 nC
Power Max
125W
Pd Power Dissipation
125 W
Part Aliases
SIHF830-E3
Packaging
Tube
Package Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
1300pF @ 25V
Id Continuous Drain Current
8 A
Gate Charge Qg Vgs
63nC @ 10V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
20 ns
Drain to Source Voltage Vdss
500V
Current Continuous Drain Id 25°C
8A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • Q: IRF840PBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRF840PBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRF840PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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