CGHV96050F2 CREE SMD High-Frequency Tubes

CREE
  • CGHV96050F2

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  • Part Number
  • CGHV96050F2
  • Product Categories
  • Transistors - FETs, MOSFETs - Single
  • Package
  • SMD
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The CGHV96050F2 from CREE manufacturer is a Transistors - FETs, MOSFETs - Single with RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.. The CGHV96050F2 is RF Mosfet HEMT 40V 500mA 7.9GHz ~ 9.6GHz 10dB 70W 440210 . More details for CGHV96050F2 can be seen below.

Details

RF Mosfet HEMT 40V 500mA 7.9GHz ~ 9.6GHz 10dB 70W 440210
Categories
High-Frequency Tubes
Manufacturer
CREE
Veswin Part Number
V107226-CGHV96050F2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
CGHV96050F2 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
2.3 V
Vgs Gate Source Breakdown Voltage
3 V
Vds Drain Source Breakdown Voltage
100 V
Transistor Type
HEMT
Transistor Polarity
N-Channel
Technology
GaN SiC
Rds On Drain Source Resistance
-
Pd Power Dissipation
-
Packaging
Tray
Package Case
440210
P1dB Compression Point
-
Output Power
50 W
Operating Temperature Range
- 40 C to + 150 C
Operating Frequency
8.4 GHz to 9.6 GHz
NF Noise Figure
-
Mounting Style
Screw
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
-
Id Continuous Drain Current
6 A
Gate Source Cutoff Voltage
- 10 V to + 2 V
Gain
10 dB
Forward Transconductance Min
-
Development Kit
CGHV96050F2-TB
Configuration
Single
Class
-
Application
-

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