CGH40006P CREE Transistors

CREE
  • CGH40006P

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  • Part Number
  • CGH40006P
  • Product Categories
  • Transistors - FETs, MOSFETs - Single
  • Package
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The CGH40006P from CREE manufacturer is a Transistors - FETs, MOSFETs - Single with Transistors 8W RF GAN HEMT 440109 PKG. The CGH40006P is RF Mosfet HEMT 28V 100mA 0Hz ~ 6GHz 13dB 8W 440109 . More details for CGH40006P can be seen below.

Details

RF Mosfet HEMT 28V 100mA 0Hz ~ 6GHz 13dB 8W 440109
Categories
Transistors
Manufacturer
CREE
Veswin Part Number
V1070-CGH40006P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 06 - May 11 (Choose Expedited Shipping)
EDA / CAD Models
CGH40006P by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
- 3 V
Vgs Gate Source Breakdown Voltage
- 10 V to + 2 V
Vds Drain Source Breakdown Voltage
120 V
Transistor Type
HEMT
Transistor Polarity
N-Channel
Technology
GaN SiC
Rds On Drain Source Resistance
-
Pd Power Dissipation
-
Packaging
Tube
Package Case
440109
P1dB Compression Point
-
Output Power
9 W
Operating Temperature Range
-
Operating Frequency
2 GHz to 6 GHz
NF Noise Figure
-
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
-
Id Continuous Drain Current
0.75 A
Gate Source Cutoff Voltage
-
Gain
13 dB
Forward Transconductance Min
-
Development Kit
CGH40006P-TB
Configuration
Single
Class
-
Application
-

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  • Q: CGH40006P Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: CGH40006P Technical Support?
  • A: Yes, Our product technical engineer will help you with the CGH40006P pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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