The C2M0025120D from CREE manufacturer is a FETs - Single with TO-247 Transistor: N-MOSFET, unipolar, 1.2kV, 90A, 463W, TO247-3.
The C2M0025120D is N-Channel 1200V 90A (Tc) 463W (Tc) Through Hole TO-247-3 Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247 MOSFET SIC MOSFET 1200V RDS ON 25 mOhm. More details for C2M0025120D can be seen below.
Details
N-Channel 1200V 90A (Tc) 463W (Tc) Through Hole TO-247-3
Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
- Categories
- Transistors
- Manufacturer
- CREE
- Veswin Part Number
- V1070-C2M0025120D
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 06 - May 11 (Choose Expedited Shipping)
- EDA / CAD Models
- C2M0025120D by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.4V @ 10mA
- Vgs th Gate Source Threshold Voltage
- 2.4 V
- Vgs Gate Source Voltage
- - 10 V + 25 V
- Vds Drain Source Breakdown Voltage
- 1200 V
- Unit Weight
- 1.340411 oz
- Typical Turn On Delay Time
- 14.4 ns
- Typical Turn Off Delay Time
- 28.8 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- SiC
- Supplier Device Package
- TO-247-3
- Series
- Z-FET?
- Rise Time
- 31.6 ns
- Rds On Max Id Vgs
- 34 mOhm @ 50A, 20V
- Rds On Drain Source Resistance
- 25 mOhms
- Qg Gate Charge
- 406 nC
- Power Max
- 463W
- Pd Power Dissipation
- 463 W
- Packaging
- Tube
- Package Case
- TO-247-3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 2788pF @ 1000V
- Id Continuous Drain Current
- 90 A
- Gate Charge Qg Vgs
- 161nC @ 20V
- Forward Transconductance Min
- 23.6 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Silicon Carbide (SiC)
- Fall Time
- 28.4 ns
- Drain to Source Voltage Vdss
- 1200V (1.2kV)
- Current Continuous Drain Id 25°C
- 90A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
