IPW65R045C7 Mosfet Datasheet - Infineon

Author: Release time:2024-04-17 Source: Font: Big Middle Small View count:160

IPW65R045C7 MOSFET is an N-channel device with a 650V voltage rating, a 45mOhm RDS(on), and a maximum drain current of 46.9A. Encapsulated in a TO247-3 package, it finds applications in diverse fields such as telecom, server, solar, and PC power. 

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This article delves into the essential parameters, distinguishing features, broad application spectrum, advantageous attributes, and packaging details of the IPW65R045C7 component. Let us delve further into the intricacies of this innovative device.


IPW65R045C7 Overview

The IPW65R045C7 MOSFET, a flagship product in Infineon's CoolMOS™ C7 superjunction series, epitomizes a paradigm shift in power management technology. Engineered with groundbreaking features, it stands as a pinnacle of efficiency and performance across diverse applications. Boasting a 650V voltage capability and an unprecedented R DS(on)/package ratio, this MOSFET redefines industry standards, minimizing conduction losses and maximizing energy efficiency. Its low switching losses ensure efficiency improvements across the entire load spectrum, setting a new benchmark for reliability and performance.


Efficiency lies at the core of the IPW65R045C7's design, with innovations such as minimized energy stored in output capacitance (Eoss) and reduced gate charge (Qg) enhancing light load efficiency and optimizing performance. Furthermore, its compact design enables the utilization of smaller packages or the consolidation of components, leading to increased power density and greater design flexibility in telecommunications, servers, solar inverters, and PC power supplies. With 12 years of manufacturing expertise in superjunction technology backing it, coupled with Infineon's stringent quality standards, the IPW65R045C7 guarantees unparalleled reliability and durability, making it the preferred choice for critical applications where efficiency, reliability, and performance are paramount.


The IPW65R045C7 represents a transformative advancement in power management solutions, offering unmatched efficiency, reliability, and performance across various sectors. Its revolutionary features and benefits position it as a cornerstone of next-generation power management technology, empowering industries to achieve new heights of efficiency and performance in today's demanding applications.


IPW65R045C7 Pinout

IPW65R045C7 Pinout.png

IPW65R045C7 Specifications





Transistor Polarity


Number of Channels

1 Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

46 A

Rds On - Drain-Source Resistance

40 mOhms

Vgs - Gate-Source Voltage

-20 V, +20 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

93 nC

Minimum Operating Temperature


Maximum Operating Temperature


Pd - Power Dissipation

227 W

Fall Time

7 ns


21.1 mm


16.13 mm

Product Type


Rise Time

14 ns

Typical Turn-Off Delay Time

82 ns

Typical Turn-On Delay Time

20 ns


5.21 mm

Unit Weight

0.211644 oz


IPW65R045C7 Parameters

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Maximum ratings  (Tj=25°C)

Maximum ratings.png


Thermal characteristics

Thermal characteristics.png

Features of IPW65R045C7

  • Cutting-edge 650V voltage capability.

  • Pioneering R DS(on)/package ratio, setting new industry standards.

  • Minimized energy stored in output capacitance (Eoss), enhancing efficiency.

  • Reduced gate charge (Qg) for optimized performance.

  • Space-efficient design enables utilization of smaller packages or consolidation of components.

  • Backed by 12 years of manufacturing expertise in superjunction technology, ensuring reliability and performance excellence.

Advantages & Benefits of IPW65R045C7


Enhanced Safety Margin: Offers improved safety margins, ensuring reliable operation in diverse applications, including both switch-mode power supplies (SMPS) and solar inverter systems.


Lowest Conduction Losses per Package: Features the industry's lowest conduction losses per package, optimizing energy efficiency and reducing power dissipation.


Minimal Switching Losses: With its advanced design, minimizes switching losses, enhancing overall system efficiency and reducing heat generation.


Superior Light Load Efficiency: Exhibits better light load efficiency, ensuring optimal performance even under low load conditions, contributing to energy savings and extended system lifespan.


Increased Power Density: Enables the design of compact and high-power-density systems, offering greater flexibility and space-saving benefits in various applications.


Exceptional CoolMOS™ Quality: Maintains outstanding quality standards inherent to Infineon's CoolMOS™ technology, ensuring reliability, durability, and consistent performance over time.




The IPW65R045C7 MOSFET's superior performance characteristics make it an integral component in a wide range of applications spanning the telecom, server, solar, and PC power sectors, where efficiency, reliability, and performance are paramount.


Telecom: In the telecom industry, the IPW65R045C7 serves in power management systems for base stations, amplifiers, and network infrastructure. Its high voltage capability (650V) ensures reliable operation in demanding telecom environments where power fluctuations are common. Additionally, its low R DS(on)/package ratio and reduced gate charge make it ideal for high-frequency switching applications, enabling efficient power conversion and transmission.


Server: Within server systems, the IPW65R045C7 plays a crucial role in power supply units (PSUs), voltage regulation modules (VRMs), and DC-DC converters. Its ability to handle high continuous drain current (46A) and dissipate significant power (227W) makes it suitable for servers with high computational loads. The MOSFET's fast switching characteristics, coupled with lower energy stored in output capacitance, contribute to improved efficiency and reliability in server operations.


Solar: In solar power inverters and charge controllers, the IPW65R045C7 is employed for DC-AC conversion and battery charging applications. Its high drain-source breakdown voltage and low on-resistance reduce power losses and improve overall system efficiency in solar energy conversion. The MOSFET's compact size allows for the design of smaller, more efficient solar power systems, while its robust construction ensures durability in outdoor environments.


PC Power: Within personal computer (PC) systems, the IPW65R045C7 is utilized in power supply units, voltage regulation circuits, and motor control applications. Its ability to handle high currents and withstand significant voltage fluctuations makes it suitable for powering high-performance gaming rigs, workstations, and servers. The MOSFET's low gate charge and fast switching times contribute to improved transient response and system stability in PC power applications, enhancing overall performance and user experience.

Package Outline


Package Outline.png

Datasheet PDF

IPW65R045C7 datasheet PDF here>>


The IPW65R045C7 MOSFET is manufactured by Infineon Technologies AG, a leading semiconductor company headquartered in Germany. Infineon is renowned for its innovative power semiconductor solutions that cater to various industries such as automotive, industrial, renewable energy, consumer electronics, and more. With a strong focus on research and development, Infineon continues to push the boundaries of semiconductor technology, delivering products like the IPW65R045C7 MOSFET that offer exceptional performance, reliability, and efficiency to meet the evolving needs of its customers worldwide.


The IPW65R045C7 MOSFET is a testament to Infineon's engineering prowess. Designed to deliver best-in-class performance, this MOSFET offers exceptional efficiency, reliability, and versatility, making it an ideal choice for a wide range of applications. Whether it's powering telecommunications infrastructure, driving server systems, enabling solar energy conversion, or enhancing PC power management, the IPW65R045C7 exemplifies Infineon's commitment to delivering innovative solutions that address the evolving needs of the market.


Infineon's dedication to sustainability is also evident in its corporate practices. The company actively promotes environmental stewardship and social responsibility, striving to minimize its ecological footprint and contribute positively to the communities in which it operates. Through initiatives such as energy-efficient manufacturing processes, waste reduction programs, and community engagement activities, Infineon demonstrates its commitment to building a more sustainable future.


As technology continues to evolve at a rapid pace, Infineon remains at the forefront of innovation, driving progress and shaping the future of semiconductor technology. With its unwavering commitment to excellence, sustainability, and customer satisfaction, Infineon is poised to continue leading the way in semiconductor innovation for years to come.



What is IPW65R045C7?


It is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power supplies, motor control, and other power management circuits.

What are the key features of IPW65R045C7?


It features a low on-state resistance (RDS(on)), high current capability, low gate charge, and fast switching characteristics, making it suitable for efficient power conversion.


What is the package type of IPW65R045C7?


It is typically available in a TO-247 package, which provides good thermal performance and easy mounting on a heatsink for effective heat dissipation.


What precautions should be taken when using IPW65R045C7?


Ensure proper heat sinking to prevent excessive junction temperature rise during operation. Adhere to the recommended operating conditions specified in the datasheet, including voltage, current, and temperature limits.

Can IPW65R045C7 be used in high-frequency applications?


While IPW65R045C7 is primarily designed for high-power switching applications, it may not be optimized for high-frequency operation. Consult the datasheet and consider the switching characteristics and parasitic capacitances to determine suitability for specific frequency requirements.


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