STY139N65M5 ST TO-247 Transistors

ST
  • STY139N65M5

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  • Part Number
  • STY139N65M5
  • Brand
  • ST
  • Product Categories
  • FETs - Single
  • Package
  • TO-247
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The STY139N65M5 from ST manufacturer is a FETs - Single with MOSFET N-CH 650V 130A MAX247. The STY139N65M5 is N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247? Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A. More details for STY139N65M5 can be seen below.

Details

N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247?
Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube
MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A
Categories
Transistors
Manufacturer
STMicroelectronics
Veswin Part Number
V1070-STY139N65M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
STY139N65M5 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
5V @ 250μA
Vgs Gate Source Voltage
25 V
Vds Drain Source Breakdown Voltage
650 V
Unit Weight
1.340411 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
MAX247?
Series
MDmesh? V
Rds On Max Id Vgs
17 mOhm @ 65A, 10V
Rds On Drain Source Resistance
14 mOhms
Qg Gate Charge
363 nC
Power Max
625W
Pd Power Dissipation
625 mW
Packaging
Tube
Package Case
TO-247-3
Operating Temperature
150°C (TJ)
Number of Channels
1 Channel
Mounting Style
Through Hole
Mounting Type
Through Hole
Input Capacitance Ciss Vds
15600pF @ 100V
Id Continuous Drain Current
130 A
Gate Charge Qg Vgs
363nC @ 10V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
650V
Current Continuous Drain Id 25°C
130A (Tc)
Configuration
Single

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