STP8NK100Z ST TO-220 Transistors

ST
  • STP8NK100Z

Images are for reference. See Product Specification

  • Part Number
  • STP8NK100Z
  • Brand
  • ST
  • Product Categories
  • IC Chips
  • Package
  • TO-220
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The STP8NK100Z from ST manufacturer is a IC Chips with N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET,MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A. The STP8NK100Z is N-Channel 1000V 6.5A (Tc) 160W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220 Tube MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A. More details for STP8NK100Z can be seen below.

Details

N-Channel 1000V 6.5A (Tc) 160W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220 Tube
MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A
Categories
Transistors
Manufacturer
STMicroelectronics
Veswin Part Number
V1070-STP8NK100Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 12 - May 17 (Choose Expedited Shipping)
EDA / CAD Models
STP8NK100Z by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4.5V @ 100μA
Vgs Gate Source Voltage
30 V
Vds Drain Source Breakdown Voltage
1000 V
Unit Weight
0.011640 oz
Typical Turn On Delay Time
28 ns
Typical Turn Off Delay Time
59 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
TO-220AB
Series
SuperMESH?
Rise Time
19 ns
Rds On Max Id Vgs
1.85 Ohm @ 3.15A, 10V
Rds On Drain Source Resistance
1.6 Ohms
Qg Gate Charge
73 nC
Power Max
160W
Pd Power Dissipation
160 W
Packaging
Tube
Package Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
2180pF @ 25V
Id Continuous Drain Current
6.5 A
Gate Charge Qg Vgs
102nC @ 10V
Forward Transconductance Min
7 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
30 ns
Drain to Source Voltage Vdss
1000V (1kV)
Current Continuous Drain Id 25°C
6.5A (Tc)
Configuration
Single
Channel Mode
Enhancement

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ST Original Stock

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  • A: We Provide 90 days warranty for our product.
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