STN1NK60Z ST SOT-223 Transistors

ST
  • STN1NK60Z

Images are for reference. See Product Specification

  • Part Number
  • STN1NK60Z
  • Brand
  • ST
  • Product Categories
  • FETs - Single
  • Package
  • SOT-223
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The STN1NK60Z from ST manufacturer is a FETs - Single with N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET,MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH. The STN1NK60Z is N-Channel 600V 300mA (Tc) 3.3W (Tc) Surface Mount SOT-223 Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH. More details for STN1NK60Z can be seen below.

Details

N-Channel 600V 300mA (Tc) 3.3W (Tc) Surface Mount SOT-223
Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R
MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH
Categories
Transistors
Manufacturer
STMicroelectronics
Veswin Part Number
V1070-STN1NK60Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 12 - May 17 (Choose Expedited Shipping)
EDA / CAD Models
STN1NK60Z by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4.5V @ 50μA
Vgs Gate Source Voltage
30 V
Vds Drain Source Breakdown Voltage
600 V
Unit Weight
0.004395 oz
Typical Turn On Delay Time
5.5 ns
Typical Turn Off Delay Time
13 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
SOT-223
Series
SuperMESH?
Rise Time
5 ns
Rds On Max Id Vgs
15 Ohm @ 400mA, 10V
Rds On Drain Source Resistance
15 Ohms
Qg Gate Charge
4.9 nC
Power Max
3.3W
Pd Power Dissipation
3.3 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-261-4, TO-261AA
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
94pF @ 25V
Id Continuous Drain Current
300 mA
Gate Charge Qg Vgs
6.9nC @ 10V
Forward Transconductance Min
0.5 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
18 ns
Drain to Source Voltage Vdss
600V
Current Continuous Drain Id 25°C
300mA (Tc)
Configuration
Single Dual Drain
Channel Mode
Enhancement

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ST Original Stock

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ST Obsolete Part

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