SIR662DP-T1-GE3 VISHAY/SILICONIX QFN-8 Transistors

SIR662DP-T1-GE3
  • SIR662DP-T1-GE3

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  • Part Number
  • SIR662DP-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • QFN-8
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The SIR662DP-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET, N CHANNEL, 60V, 60A, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V. The SIR662DP-T1-GE3 is N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK? SO-8 Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET. More details for SIR662DP-T1-GE3 can be seen below.

Details

N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK? SO-8
Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SIR662DP-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
SIR662DP-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
1 V to 2.5 V
Vgs Gate Source Voltage
+/- 20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.017870 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
ThunderFET TrenchFET
Technology
Si
Series
SIRxxxDP
Rds On Drain Source Resistance
2.7 mOhms
Qg Gate Charge
64 nC
Pd Power Dissipation
104 W
Part Aliases
SIR662DP-GE3
Packaging
Reel
Package Case
SO-8
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
60 A
Forward Transconductance Min
93 S
Configuration
Single

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