SIHF22N60E-GE3 VISHAY/SILICONIX TO-220 Transistors

SIHF22N60E-GE3
  • SIHF22N60E-GE3

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  • Part Number
  • SIHF22N60E-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • TO-220
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The SIHF22N60E-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS. The SIHF22N60E-GE3 is N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS. More details for SIHF22N60E-GE3 can be seen below.

Details

N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP
MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SIHF22N60E-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
SIHF22N60E-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
4 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
600 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
18 ns
Typical Turn Off Delay Time
66 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
E Series
Technology
Si
Series
E
Rise Time
27 ns
Rds On Drain Source Resistance
180 mOhms
Qg Gate Charge
86 nC
Pd Power Dissipation
35 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
21 A
Forward Transconductance Min
6.4 S
Fall Time
35 ns
Configuration
Single
Channel Mode
Enhancement

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