The SI7790DP-T1-GE3 from VISHAY manufacturer is a FETs - Single with N CHANNEL MOSFET, 40V, 50A, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0036ohm, Rds(on) Test Voltage Vgs:25V, Threshold Voltage Vgs:2.5V.
The SI7790DP-T1-GE3 is N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK? SO-8 Trans MOSFET N-CH 40V 25.3A 8-Pin PowerPAK SO T/R MOSFET 40V 50A 69W 4.5mohm @ 10V. More details for SI7790DP-T1-GE3 can be seen below.
Details
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK? SO-8
Trans MOSFET N-CH 40V 25.3A 8-Pin PowerPAK SO T/R
MOSFET 40V 50A 69W 4.5mohm @ 10V
- Categories
- Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V1070-SI7790DP-T1-GE3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 11 - May 16 (Choose Expedited Shipping)
- EDA / CAD Models
- SI7790DP-T1-GE3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 25 V
- Vds Drain Source Breakdown Voltage
- 40 V
- Unit Weight
- 0.017870 oz
- Typical Turn On Delay Time
- 42 ns
- Typical Turn Off Delay Time
- 45 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Rise Time
- 34 ns
- Rds On Drain Source Resistance
- 4.5 mOhms
- Pd Power Dissipation
- 5.2 W
- Part Aliases
- SI7790DP-GE3
- Packaging
- Reel
- Package Case
- SO-8
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Id Continuous Drain Current
- 25.3 A
- Fall Time
- 28 ns
- Configuration
- Single Quad Drain Triple Source
- Channel Mode
- Enhancement
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