SI7450DP-T1-E3 VISHAY/SILICONIX QFN-8 MOS Drive

SI7450DP-T1-E3
  • SI7450DP-T1-E3

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  • Part Number
  • SI7450DP-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • IC Chips
  • Package
  • QFN-8
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The SI7450DP-T1-E3 from VISHAY/SILICONIX manufacturer is a IC Chips with MOSFET N-CH 200V 3.2A PPAK. The SI7450DP-T1-E3 is N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK? SO-8 Trans MOSFET N-CH 200V 3.2A Automotive 8-Pin PowerPAK SO T/R MOSFET 200V 5.3A 5.2W. More details for SI7450DP-T1-E3 can be seen below.

Details

N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK? SO-8
Trans MOSFET N-CH 200V 3.2A Automotive 8-Pin PowerPAK SO T/R
MOSFET 200V 5.3A 5.2W
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI7450DP-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
SI7450DP-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4.5V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
14 ns
Typical Turn Off Delay Time
32 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
TrenchFET
Technology
Si
Supplier Device Package
PowerPAKR SO-8
Series
TrenchFETR
Rise Time
20 ns
Rds On Max Id Vgs
80 mOhm @ 4A, 10V
Rds On Drain Source Resistance
80 mOhms
Power Max
1.9W
Pd Power Dissipation
5.2 W
Part Aliases
SI7450DP-E3
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR SO-8
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
-
Id Continuous Drain Current
5.3 A
Gate Charge Qg Vgs
42nC @ 10V
Forward Transconductance Min
19 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
25 ns
Drain to Source Voltage Vdss
200V
Current Continuous Drain Id 25°C
3.2A (Ta)
Configuration
Single
Channel Mode
Enhancement

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