SI7145DP-T1-GE3 VISHAY SOP8 MOS Drive

VISHAY
  • SI7145DP-T1-GE3

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  • Part Number
  • SI7145DP-T1-GE3
  • Product Categories
  • FETs - Single
  • Package
  • SOP8
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The SI7145DP-T1-GE3 from VISHAY manufacturer is a FETs - Single with Trans MOSFET P-CH 30V 36.5A 8-Pin PowerPAK SO T/R . The SI7145DP-T1-GE3 is P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK? SO-8 Trans MOSFET P-CH 30V 36.5A 8-Pin PowerPAK SO EP T/R MOSFET -30V 2.6mOhm@10V 60A P-Ch G-III. More details for SI7145DP-T1-GE3 can be seen below.

Details

P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK? SO-8
Trans MOSFET P-CH 30V 36.5A 8-Pin PowerPAK SO EP T/R
MOSFET -30V 2.6mOhm@10V 60A P-Ch G-III
Categories
MOS Drive
Manufacturer
Vishay Siliconix
Veswin Part Number
V7583-SI7145DP-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
SI7145DP-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.3V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 30 V
Unit Weight
0.017870 oz
Typical Turn On Delay Time
125 ns
Typical Turn Off Delay Time
107 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
PowerPAKR SO-8
Series
TrenchFETR
Rise Time
110 ns
Rds On Max Id Vgs
2.6 mOhm @ 25A, 10V
Rds On Drain Source Resistance
2.6 mOhms
Qg Gate Charge
129 nC
Power Max
104W
Pd Power Dissipation
104 W
Part Aliases
SI7145DP-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR SO-8
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
15660pF @ 15V
Id Continuous Drain Current
- 60 A
Gate Charge Qg Vgs
413nC @ 10V
Forward Transconductance Min
110 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
43 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
60A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • Q: SI7145DP-T1-GE3 Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SI7145DP-T1-GE3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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