The SI7115DN-T1-GE3 from VISHAY manufacturer is a FETs - Single with MOSFET P-CH 150V 8.9A.
The SI7115DN-T1-GE3 is P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK? 1212-8 Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R MOSFET 150V 8.9A 52W 295mohm @ 10V. More details for SI7115DN-T1-GE3 can be seen below.
Details
P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK? 1212-8
Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R
MOSFET 150V 8.9A 52W 295mohm @ 10V
- Categories
- Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V1070-SI7115DN-T1-GE3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- SI7115DN-T1-GE3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 150 V
- Typical Turn On Delay Time
- 20 ns 11 ns
- Typical Turn Off Delay Time
- 38 ns 52 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Series
- SI71xxDx
- Rise Time
- 95 ns 28 ns
- Rds On Drain Source Resistance
- 295 mOhms
- Pd Power Dissipation
- 3.7 W
- Part Aliases
- SI7115DN-GE3
- Packaging
- Reel
- Package Case
- PowerPAK-1212-8
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Minimum Operating Temperature
- - 50 C
- Maximum Operating Temperature
- + 150 C
- Id Continuous Drain Current
- 2.3 A
- Fall Time
- 34 ns 35 ns
- Configuration
- Single
- Channel Mode
- Enhancement
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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