SI5486DU-T1-GE3 VISHAY Transistors

VISHAY
  • SI5486DU-T1-GE3

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  • Part Number
  • SI5486DU-T1-GE3
  • Product Categories
  • FETs - Single
  • Package
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The SI5486DU-T1-GE3 from VISHAY manufacturer is a FETs - Single with MOSFET, N CHANNEL, 20V, 12A, POWERPAK-8, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:400mV. The SI5486DU-T1-GE3 is N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak? ChipFet (3x1.9) Trans MOSFET N-CH 20V 11.6A 8-Pin PowerPAK ChipFET T/R MOSFET 20V 12A 31W 15mohm @ 4.5V. More details for SI5486DU-T1-GE3 can be seen below.

Details

N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak? ChipFet (3x1.9)
Trans MOSFET N-CH 20V 11.6A 8-Pin PowerPAK ChipFET T/R
MOSFET 20V 12A 31W 15mohm @ 4.5V
Categories
Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V1070-SI5486DU-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
SI5486DU-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 250μA
Vgs Gate Source Voltage
8 V
Vds Drain Source Breakdown Voltage
20 V
Typical Turn On Delay Time
10 ns 7 ns
Typical Turn Off Delay Time
50 ns 55 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
8-PowerPakR ChipFet
Series
TrenchFETR
Rise Time
15 ns
Rds On Max Id Vgs
15 mOhm @ 7.7A, 4.5V
Rds On Drain Source Resistance
15 mOhms
Power Max
31W
Pd Power Dissipation
3.1 W
Part Aliases
SI5486DU-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-PowerPakR ChipFET?
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
2100pF @ 10V
Id Continuous Drain Current
11.6 A
Gate Charge Qg Vgs
54nC @ 8V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
15 ns 10 ns
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
12A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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