SI4925DDY-T1-GE3 VISHAY SOIC-8 MOS Field Effect Transistors

VISHAY

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  • Part Number
  • SI4925DDY-T1-GE3
  • Product Categories
  • MOS Field Effect Transistors
  • Package
  • SOIC-8
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The SI4925DDY-T1-GE3 from VISHAY manufacturer is a MOS Field Effect Transistors with MOSFET -30V Vds 20V Vgs SO-8 . The SI4925DDY-T1-GE3 is Mosfet Array 2 P-Channel (Dual) 30V 8A 5W Surface Mount 8-SO Trans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R MOSFET 30V 8.0A 5.0W 29mohm @ 10V. More details for SI4925DDY-T1-GE3 can be seen below.

Details

Mosfet Array 2 P-Channel (Dual) 30V 8A 5W Surface Mount 8-SO
Trans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
MOSFET 30V 8.0A 5.0W 29mohm @ 10V
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-SI4925DDY-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
SI4925DDY-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs th Gate Source Threshold Voltage
- 3 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 30 V
Unit Weight
0.006596 oz
Typical Turn On Delay Time
10 ns 42 ns
Typical Turn Off Delay Time
45 ns 40 ns
Transistor Type
2 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
8-SO
Series
TrenchFETR
Rise Time
8 ns 35 ns
Rds On Max Id Vgs
29 mOhm @ 7.3A, 10V
Rds On Drain Source Resistance
29 mOhms
Qg Gate Charge
32 nC
Power Max
5W
Pd Power Dissipation
2.5 W
Part Aliases
SI4925DDY-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
1350pF @ 15V
Id Continuous Drain Current
7.3 A
Gate Charge Qg Vgs
50nC @ 10V
FET Type
2 P-Channel (Dual)
FET Feature
Standard
Fall Time
12 ns 16 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
8A
Configuration
Dual Dual Drain
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SI4925DDY-T1-GE3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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