The SI4914DY-T1-E3 from VISHAY manufacturer is a MOS Field Effect Transistors with MOSFET DUAL N-CH 30V (D-S) W/SCHOTTKY.
The SI4914DY-T1-E3 is Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SO. More details for SI4914DY-T1-E3 can be seen below.
Details
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.5A, 5.7A 1.1W, 1.16W Surface Mount 8-SO
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V107110-SI4914DY-T1-E3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- SI4914DY-T1-E3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.5V @ 250μA
- Supplier Device Package
- 8-SO
- Series
- LITTLE FOOTR
- Rds On Max Id Vgs
- 23 mOhm @ 7A, 10V
- Power Max
- 1.1W, 1.16W
- Packaging
- Digi-ReelR
- Package Case
- 8-SOIC (0.154", 3.90mm Width)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Input Capacitance Ciss Vds
- -
- Gate Charge Qg Vgs
- 8.5nC @ 4.5V
- FET Type
- 2 N-Channel (Half Bridge)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 5.5A, 5.7A
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- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the SI4914DY-T1-E3 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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