SI3433CDV-T1-GE3 VISHAY/SILICONIX TSOP-6 Transistors

SI3433CDV-T1-GE3
  • SI3433CDV-T1-GE3

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  • Part Number
  • SI3433CDV-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • TSOP-6
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The SI3433CDV-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET P-CH 20V 6A 6TSOP. The SI3433CDV-T1-GE3 is P-Channel 20V 6A (Tc) 1.6W (Ta), 3.3W (Tc) Surface Mount 6-TSOP Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP T/R MOSFET 20V 6.0A 3.3W 38mohm @ 4.5V. More details for SI3433CDV-T1-GE3 can be seen below.

Details

P-Channel 20V 6A (Tc) 1.6W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP T/R
MOSFET 20V 6.0A 3.3W 38mohm @ 4.5V
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI3433CDV-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
SI3433CDV-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 250μA
Vgs th Gate Source Threshold Voltage
- 1 V
Vgs Gate Source Voltage
8 V
Vds Drain Source Breakdown Voltage
- 20 V
Unit Weight
0.000705 oz
Typical Turn On Delay Time
20 ns
Typical Turn Off Delay Time
50 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
6-TSOP
Series
TrenchFETR
Rise Time
22 ns
Rds On Max Id Vgs
38 mOhm @ 5.2A, 4.5V
Rds On Drain Source Resistance
38 mOhms
Qg Gate Charge
30 nC
Power Max
3.3W
Pd Power Dissipation
1.6 W
Part Aliases
SI3433CDV-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
SOT-23-6 Thin, TSOT-23-6
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
1300pF @ 10V
Id Continuous Drain Current
6 A
Gate Charge Qg Vgs
45nC @ 8V
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
20 ns
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
6A (Tc)
Configuration
Single
Channel Mode
Enhancement

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