The SI2369DS-T1-GE3 from VISHAY manufacturer is a FETs - Single with SOT23 MOSFET, P CH, -30V, -7.6A .
The SI2369DS-T1-GE3 is P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236 Trans MOSFET P-CH 30V 5.4A 3-Pin SOT-23 T/R MOSFET -30V 29mOhm@-10V -7.6A P-CH. More details for SI2369DS-T1-GE3 can be seen below.
Details
P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
Trans MOSFET P-CH 30V 5.4A 3-Pin SOT-23 T/R
MOSFET -30V 29mOhm@-10V -7.6A P-CH
- Categories
- Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V1070-SI2369DS-T1-GE3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 09 - May 14 (Choose Expedited Shipping)
- EDA / CAD Models
- SI2369DS-T1-GE3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.5V @ 250μA
- Vds Drain Source Breakdown Voltage
- 30 V
- Unit Weight
- 0.050717 oz
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Tradename
- TrenchFET
- Technology
- Si
- Supplier Device Package
- TO-236
- Series
- TrenchFETR
- Rds On Max Id Vgs
- 29 mOhm @ 5.4A, 10V
- Rds On Drain Source Resistance
- 29 mOhms
- Power Max
- 2.5W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Type
- Surface Mount
- Input Capacitance Ciss Vds
- 1295pF @ 15V
- Id Continuous Drain Current
- - 7.6 A
- Gate Charge Qg Vgs
- 36nC @ 10V
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 7.6A (Tc)
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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