SI2306BDS-T1-GE3 VISHAY SOT-23-3 MOS Field Effect Transistors

VISHAY
  • SI2306BDS-T1-GE3

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  • Part Number
  • SI2306BDS-T1-GE3
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23-3
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The SI2306BDS-T1-GE3 from VISHAY manufacturer is a FETs - Single with N-Channel 30-V (D-S) MOSFET. The SI2306BDS-T1-GE3 is N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V. More details for SI2306BDS-T1-GE3 can be seen below.

Details

N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-SI2306BDS-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 15 - May 20 (Choose Expedited Shipping)
EDA / CAD Models
SI2306BDS-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
30 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
7 ns
Typical Turn Off Delay Time
14 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
TrenchFET
Technology
Si
Supplier Device Package
SOT-23-3 (TO-236)
Series
TrenchFETR
Rise Time
12 ns
Rds On Max Id Vgs
47 mOhm @ 3.5A, 10V
Rds On Drain Source Resistance
47 mOhms
Power Max
750mW
Pd Power Dissipation
750 mW
Part Aliases
SI2306BDS-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
305pF @ 15V
Id Continuous Drain Current
3.16 A
Gate Charge Qg Vgs
4.5nC @ 5V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
12 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
3.16A (Ta)
Configuration
Single
Channel Mode
Enhancement

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  • Q: SI2306BDS-T1-GE3 Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SI2306BDS-T1-GE3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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