SI2301BDS-T1-E3 VISHAY/SILICONIX TO-236-3 Transistors

SI2301BDS-T1-E3
  • SI2301BDS-T1-E3

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  • Part Number
  • SI2301BDS-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • TO-236-3
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The SI2301BDS-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET 20V 2.0A 0.9W. The SI2301BDS-T1-E3 is P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236) Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R MOSFET 20V 2.0A 0.9W. More details for SI2301BDS-T1-E3 can be seen below.

Details

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
MOSFET 20V 2.0A 0.9W
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI2301BDS-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 02 - May 07 (Choose Expedited Shipping)
EDA / CAD Models
SI2301BDS-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
950mV @ 250μA
Vgs Gate Source Voltage
8 V
Vds Drain Source Breakdown Voltage
- 20 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
20 ns
Typical Turn Off Delay Time
30 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
SOT-23-3 (TO-236)
Series
TrenchFETR
Rise Time
40 ns
Rds On Max Id Vgs
100 mOhm @ 2.8A, 4.5V
Rds On Drain Source Resistance
100 mOhms
Power Max
700mW
Pd Power Dissipation
700 mW
Part Aliases
SI2301BDS-E3
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
375pF @ 6V
Id Continuous Drain Current
2.2 A
Gate Charge Qg Vgs
10nC @ 4.5V
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
40 ns
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
2.2A (Ta)
Configuration
Single
Channel Mode
Enhancement

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